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CVD System with Liquid Precursor Unit
Overview： A liquid-precursor introduction unit was added at the upper stream of our standard CVD system [MPCVD series]. Vapor of metallic compounds or oxides bubbled by carrier gas can be introduced in to CVD reaction zone for reaction and film deposition.
Characteristic：
- Liquid precursors can be heated with its individual heater.
- The flow rate of the bubbling gas can be controlled separately.
- TEOS can be introduced for depositing SiO2 insulation film.
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