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world's first table top Plasma Assisted Metal Organic Chemical Vapor Deposition (PA-MOCVD) system for GaN, InGaN and AlGaN deposition processes. In this unique system, having a plasma source N2 is used instead of NH3 for growing nitrides thus eliminating abatment of NH3 and lowering H2 content in the films. Plasma enhancement via RF show plasma source also allows lower deposition temperatures (600°C versus 1100°C) making it possible to offer this process in a table top system.
Higher throughput for manufacturing can be achieved through clustering
Features
- Table top system
- 10" SS chamber
- RF plasma source with shower head gas distribution
- Auto tuner
- 4" Substrate holder, heated up to 900°C
- Five bubblers with individual cooling/heating baths
- Heated gas lines
- Additional MFC’s
- 250l/s turbomolecular pumping package
- 5x10-7 torr base pressure
- Fully automated PC based, recipe driven
- LabVIEW user interface
- EMO protection and safety interlocks
Options
- Stand alone system
- ICP or microwave plasma source
- 14" SS electropolished cubical chamber
- 8" or 12" substrate holder
- 700°C rotating substrate holder for 6" platen and 950°C for 4" platen
- Additional Bubblers and MFCs
- Auto Load/Unload
- Cluster configuration compatibility
Applications
- III-V Semiconductor layers
- Blue LEDs
- Laser Diodes
- InN Nanorods in UV-Vis-IR optoelectronics
- MoS2, BN and Graphene in 3D and 2D materials
